Emerging Phenomena-dependent Non-CMOS Nanoelectronic Devices - What Are They?
نویسندگان
چکیده
Complementary metal oxide semiconductor (CMOS) transistors have reached the nanometer geometry scale (1–100 nm) where they are difficult to be scaled anymore due to essentially quantum mechanical properties effects. This paper discusses emerging non-CMOS nanoelectronic devices (nanodevices) that could potentially be able to circumvent this problem. First we propose a nanodevice taxonomy which classifes them according to the physical phenomena driving their operations into electrical, magnetic, and mechanical nanodevices. Thereafter, a detailed analysis and comparison of the difference nanodevice classes are presented, including structures, advantages, disadvantages and potential applications.
منابع مشابه
Impact of Manufacturing Defects on Carbon Nanotube Logic Circuits
As CMOS technology enters the nanoelectronics realm (tens of nanometres and below), where quantum mechanical effects start to prevail, conventional CMOS devices are meeting many technological challenges for further scaling. This situation has motivated the emergence of a variety of new nanoelectronic devices [1] [2]. However, as new generations of nanodevices are developed, we become less famil...
متن کاملReview Paper: Challenges for Nanoscale MOSFETs and Emerging Nanoelectronics
Complementary metal-oxide-semiconductor (CMOS) technology scaling has been a main key for continuous progress in silicon-based semiconductor industry over the past three decades. However, as the technology scaling enters nanometer regime, CMOS devices are facing many serious problems such as increased leakage currents, difficulty on increase of on-current, large parameter variations, low reliab...
متن کاملA hybrid CMOS/memristive nanoelectronic circuit for programming synaptic weights
In this paper a hybrid circuit is presented which comprises nanoelectronic resistive switches based on the electrochemical memory effect (ECM) as well as devices from a standard 40nm-CMOS process. A closed ECM device model, which is based on device physics, was used for simulations allowing for a precise prediction of the expected I-V characteristics. The device is used as a non-volatile and/or...
متن کاملCrossbar-based Nanoelectronic Architectures
The last 40 years have seen an exponential increase in the number of transistors per processor. Along with this increase has been an exponential increase in processor performance. However, now that CMOS scaling has reached the deep submicron range, fundamental physical properties are limiting the further scaling of this technology. Nanoelectronic devices have recently been developed as one poss...
متن کاملCMOL and cousins: Hybrid CMOS/nano circuit FAQs
Q: What is CMOL? A: The basic idea of hybrid CMOS/nanoelectronic circuits is to complement the CMOS stack with a few-layer nanoelectronic addon (Fig. 1a) in the form of a nanowire crossbar (Fig. 1b). This idea may be traced back at least to the pioneering paper by J. Heath et al. [1]; however, the authors of that work and several following works in which this concept has been developed (see, e....
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2008